1 CCS050M12CM2 1.2kv, 50a silicon carbide six-pack (three phase) module z-fet tm mosfet and z-rec tm diode d a t a s h e e t : c c s 0 5 0 m 1 2 c m 2 , r e v . - features ? ultra low loss ? zero reverse recovery current ? zero turn-off tail current ? high-frequency operation ? positive temperature coeffcient on v f and v ds (on) ? cu baseplate, ain dbc system benefts ? enables compact and lightweight systems ? high effciency operation ? ease of transistor gate control ? reduced cooling requirements ? reduced system cost applications ? solar inverters ? ups and smps ? induction heating ? regen drives ? 3-phase pfc ? motor drives package maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions notes v ds drain - source voltage 1.2 kv v gs gate - source voltage +25/-10 v i d continuous drain current 87 a v gs = 20v, t c =25?c fig. 21 50 v gs = 20v, t c =100?c i d(pulse) pulsed drain current 250 a pulse width t p = 50 a rate limited by t jmax ,t c = 25?c t j junction temperature 150 ?c t c ,t stg case and storage temperature range -40 to +150 ?c v isol case isolation voltage 2.5 kv dc, t=1min l stray stray inductance 30 nh measured from pins 20 to 21 m mounting torque 5.0 nm g weight 180 g p d power dissipation 337 w t c = 25oc, t j < 150oc part number package marking CCS050M12CM2 six-pack CCS050M12CM2 v ds 1.2 kv i d (t c = 100 ? c) 50 a r ds(on) (t j = 25 ? c) 25 m? e off (t j = 150 ? c) 0.6 mj subject to change without notice. www.cree.com
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain - source breakdown voltage 1.2 kv v gs, = 0v, i d = 100 ua v gs(th) gate threshold voltage 2.3 v v ds = 10 v , i d = 2.5 ma 1.6 v ds = 10 v , i d = 2.5 ma, t j = 150oc i dss zero gate voltage drain current 2 100 a v ds = 1.2 kv, v gs = 0v i gss gate-source leakage current 0.5 a v gs, = 20 v, v ds = 0v r ds(on) on state resistance 25 34 m? v gs = 20 v, i d = 50 a fig. 4 5,6,7 43 63 v gs = 20 v, i d = 50 a , t j = 150oc g fs transconductance 22 s v ds = 20 v , i d = 50 a fig. 8 21 v ds = 20 v , i d = 50 a, t j = 150oc c iss input capacitance 2.810 nf v ds = 800v, v gs = 0v f = 1mhz, v ac = 25mv fig. 16,17 c oss output capacitance 0.393 c rss reverse transfer capacitance 0.014 e on turn-on switching energy 1.1 mj v dd = 600v, v gs = +20v/-5v i d = 50a, r g = 20 inductive load = 200 h note: iec 60747-8-4 defnitions fig. 18 e off turn-off switching energy 0.6 mj r g internal gate resistance 1.5 ? f = 1mhz, v ac = 25mv q g gate charge 180 nc v dd = 800v, i d = 50a fig. 15 resistive switching t d(on) turn-on delay time 21 ns v dd = 800v, r load = 8 v gs = +20/-2v, r g = 3.8 note: iec 60747-8-4 defnitions t r(on) v sd fall time 90% to 10% 30 ns t d(off) turn-off delay time 50 ns t f(off) v sd rise time 10% to 90% 19 ns module application note: the sic mosfet module switches at speeds beyond what is customarily associated with igbt based modules. therefore, special precautions are required to realize the best performance. the interconnection between the gate driver and module housing needs to be as short as possible. this will afford the best switching time and avoid the potential for device oscillation. also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive v ds overshoots. CCS050M12CM2,rev. -
3 free-wheeling sic schottky diode characteristics symbol parameter min. typ. max. unit test conditions note v sd diode forward voltage 1.6 1.85 v i f = 50a, v gs = 0 2.2 i f = 50a, t j = 150oc q c total capacitive charge 280 c i f = 25a, v r = 1000v di f/ dt = 500 a/s, t j = 25oc t rr reverse recovery time tbd ns e rr reverse recovery energy tbd mj c total capacitance 3.42 nf v r =0v, f = 1mhz, t j = 25oc 0.23 v r =400v, f = 1mhz, t j = 25oc 0.18 v r =800v, f = 1mhz, t j = 25oc i f continuous forward current 50 a v gs = -5v, t case = 100oc thermal characteristics symbol parameter min. typ. max. unit test conditions note r thjcm thermal resistance juction-to-case for mosfet 0.37 0.49 ?c/w r thjcd thermal resistance juction-to-case for diode 0.42 0.48 CCS050M12CM2,rev. -
4 typical performance 0 40 80 120 160 200 0 3 6 9 12 15 drain current, i ds (a) drain - source voltage, v ds (v) v gs = 20 v v gs = 15 v v gs = 10 v v gs = 5 v conditions: t j = - 40 c t p < 50 s 0 40 80 120 160 200 0 3 6 9 12 15 drain current, i ds (a) drain - source voltage, v ds (v) v gs = 20 v v gs = 15 v v gs = 10 v v gs = 5 v conditions: t j = 25 c t p < 50 s figure 2. typical output characteristics t j = 25oc figure 1. typical output characteristics t j = -40oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 50 a v gs = 20 v t p < 50 s 0 40 80 120 160 200 0 3 6 9 12 15 drain current, i ds (a) drain - source voltage, v ds (v) v gs = 20 v v gs = 15 v v gs = 10 v v gs = 5 v conditions: t j = 150 c t p < 50 s figure 5. normalized on-resistance vs. drain current for various temperatures figure 4. normalized on-resistance vs. temperature 0 10 20 30 40 50 60 0 25 50 75 100 on resistance, r ds on (m ) drain source current, i ds (a) conditions: v gs = 20 v t p < 50 s t j = 150 c t j = 25 c t j = - 40 c t j = 125 c 0 10 20 30 40 50 60 70 80 90 100 12 13 14 15 16 17 18 19 20 on resistance, r ds on (m ) gate source voltage, v gs (v) conditions: i ds = 50 a t p < 50 s t j = 150 c t j = 25 c t j = - 40 c figure 6. normalized on-resistance vs. gate-source voltage for various temperatures figure 3. typical output characteristics t j = 150oc CCS050M12CM2,rev. -
5 - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 50 s v gs = - 5 v v gs = - 2 v v gs = 0 v typical performance 0 10 20 30 40 50 60 70 80 90 100 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (m ) junction temperature, t j ( c) conditions: i ds = 50 a t p < 50 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 50 100 150 200 0 4 8 12 16 20 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: t p < 50 s v ds = 10 v t j = 25 c t j = 100 c t j = 150 c - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source currnmt, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 50 s v gs = 0 v v gs = - 2 v v gs = - 5 v figure 8. transfer characteristic for various junction temperatures figure 10. diode characteristic at 25oc figure 9. diode characteristic at -40oc - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 50 s v gs = - 5 v v gs = - 2 v v gs = 0 v - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 50 s v gs = 10 v v gs = 5 v v gs = 0 v v gs = 15 v v gs = 20 v figure 12. 3rd quadrant characteristic at -40oc figure 7. on-resistance vs. temperature for various gate-source voltages figure 11. diode characteristic at 150oc CCS050M12CM2,rev. -
6 - 5 0 5 10 15 20 0 30 60 90 120 150 180 gate - source voltage, v gs (v) gate charge (nc) conditions: v ds = 800 v i ds = 50 a i gs = 10 ma typical performance - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 50 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 100 - 75 - 50 - 25 0 - 3 - 2.5 - 2 - 1.5 - 1 - 0.5 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 50 s v gs = 5 v v gs = 10 v v gs = 0 v v gs = 15 v v gs = 20 v figure 14. 3rd quadrant characteristic at 150oc 1 10 100 1000 10000 0 50 100 150 200 250 capacitance (pf) drain - source voltage, v ds (v) conditions: f = 1 mhz v ac = 25 mv c iss c oss c rss figure 13. 3rd quadrant characteristic at 25oc 1 10 100 1000 10000 0 250 500 750 1000 capacitance (pf) drain - source voltage, v ds (v) conditions: f = 1 mhz v ac = 25 mv c iss c oss c rss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 switching loss (mj) drain to source current, i ds (a) conditions: v dd = 600 v t j = 150 c l = 200 h r g = 20 ohms v gs = +20v/ - 5v e on e off figure 18. inductive switching energy vs. drain current for v ds = 600v, r g = 20 ? figure 15. typical gate charge characteristics figure 16. typical capacitances vs. drain-source voltage (0 - 250v) figure 17. typical capacitances vs. drain-source voltage (0 - 1000v) CCS050M12CM2,rev. -
7 typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 25 50 75 100 125 switching loss (mj) drain to source current, i ds (a) conditions: v dd = 800 v t j = 150 c l = 200 h r g = 20 ohms v gs = +20v/ - 5v e on e off 0 50 100 150 200 250 300 350 400 - 40 - 20 0 20 40 60 80 100 120 140 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c figure 19. inductive switching energy vs. drain current for v ds = 800v, r g = 20 ? figure 20. power dissipation derating curve 0 10 20 30 40 50 60 70 80 90 100 - 40 - 20 0 20 40 60 80 100 120 140 drain - source continuous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c figure 21. continuous current derating curve CCS050M12CM2,rev. -
8 8 package dimensions (mm) CCS050M12CM2,rev. - this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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